Semiconductor device and method for fabricating the same

ABSTRACT

A fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack, and a filter layer, and strain layers. The substrate has a semiconductor fin. The gate stack is disposed across the semiconductor fin. The gate stack includes a gate dielectric layer, a work function layer and a metal filling layer. The gate dielectric layer is disposed on the semiconductor fin. The work function layer is disposed on the gate dielectric layer. The metal filling layer is over the work function layer. The filter layer is disposed between the work function layer and the metal filling layer to prevent or decrease penetration of diffusion atoms. The strain layers are beside the gate stack. A material of the filter layer is different from a material of the work function layer and a material of the metal filling layer.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and lowering associated costs.

Such scaling down has also increased the complexity of processing and manufacturing ICs and, for these advances to be realized, similar developments in IC processing and manufacturing are needed. For example, a three dimensional transistor, such as a fin-type field-effect transistor (FinFET), has been introduced to replace a planar transistor. Although existing FinFET devices and methods of forming FinFET devices have been generally adequate for their intended purposes, they have not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a flow chart illustrating a method for fabricating a semiconductor device in accordance with some embodiments.

FIGS. 2A to 2H are cross-sectional views of a method for fabricating a semiconductor device in accordance with some embodiments.

FIG. 3A to 3B are cross-sectional views of a method for fabricating a semiconductor device in accordance with alternative embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative tennis are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

FIG. 1 is a flow chart illustrating a method for fabricating a semiconductor device in accordance with some embodiments. FIGS. 2A to 2H are cross-sectional views of a method for fabricating a semiconductor device in accordance with some embodiments.

At Step 10 in FIG. 1 and as shown in FIG. 2A, a substrate 100 is provided. The substrate 100 is divided into a region R1, a region R2, a region R3 and a region R4. The region R1 and the region R2 are used for p-type FinFETs with different threshold voltages, and the region R3 and the region R4 are used for n-type FinFETs with different threshold voltages, for example. In some embodiments, the region R1 is used for an ultra low threshold voltage (uLVT) p-type FinFET, the region R2 is used for a standard threshold voltage (SVT) p-type FinFET, the region R3 is used for an SVT n-type FinFET, and the region R4 is used for an uLVT n-type FinFET. The substrate 100 includes a bulk substrate, a silicon-on-insulator (SOI) substrate or a germanium-on-insulator (GOI) substrate, for example. In one embodiment, the substrate 100 includes a crystalline silicon substrate (e.g., wafer). The substrate 100 may include various doped regions (such as well regions) depending on design requirements (e.g., p-type substrate or n-type substrate). The doped regions may be doped with p-type or n-type dopants. For example, the doped regions may be doped with p-type dopants, such as boron or BF₂ ⁺, n-type dopants, such as phosphorus or arsenic, and/or a combination thereof. In some embodiments, n-type doped regions may be formed in the region R1 and the region R2, and p-type doped regions may be formed in the region R3 and the region R4. In some alternative embodiments, the substrate 100 may be made of some other suitable elemental semiconductors, such as diamond or germanium, a suitable compound semiconductor, such as gallium arsenide, silicon carbide, indium arsenide, or indium phosphide, or a suitable alloy semiconductor, such as silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide. Also, in some embodiments, the substrate may include other conductive layers or other semiconductor elements, such as transistors, diodes or the like.

At Step S10 in FIG. 1 and as shown in FIG. 2A, the substrate 100 has semiconductor fins 101 a, 101 b, 101 c and 101 d and isolation structures 200. The semiconductor fins 101 a, 101 b, 101 c and 101 d are formed of a material the same as or different from a material of the substrate 100. In some embodiments, a depth D1 of the semiconductor fins 101 a, 101 b, 101 c and 101 d ranges from 40 nm to 55 nm. The isolation structures 200 include silicon oxide, silicon nitride, silicon oxynitride, a spin-on dielectric material, a low-k dielectric material, or a combination thereof and formed by performing a high-density-plasma chemical vapor deposition (HDP-CVD) process, a sub-atmospheric CVD (SACVD) process or a spin-on process, for example.

As shown in FIG. 2A, in some embodiments, the semiconductor fins 101 a, 101 b, 101 c and 101 d are formed by framing trenches, forming shallow trench isolation (STI) regions in the trenches, and lowering a top surface of the STI regions by performing an etching process to a level lower than an original top surface of the substrate 100. The remaining portions of the STI regions become the isolation structures 200, and the remaining portions of the substrate 100 between the isolation structures 200 thus become the semiconductor fins 101 a, 101 b, 101 c and 101 d. Top surfaces of the isolation structures 200 are lower than top surfaces of the semiconductor fins 101 a, 101 b, 101 c and 101 d. In other words, top portions 110 of the semiconductor fins 101 a, 101 b, 101 c and 101 d protrude from the top surfaces 200 a of the isolation structures 200.

In some other embodiments, the semiconductor fins 101 a, 101 b, 101 c and 101 d are formed of a material different from a material of the substrate 100. The semiconductor fins 101 a, 101 b, 101 c and 101 d may be formed by lowering top portions of the substrate 100 between the adjacent isolation structures 200 to form recesses, and re-growing a semiconductor material different from the material of the substrate 100 in the recesses. Top portions of the STI regions may then be removed by performing a chemical mechanical polish process and an etching process, while bottom portions of the STI regions are not removed. As a result, the remaining portions of STI regions become the isolation structures 200, and top portions of the re-grown semiconductor material between the adjacent isolation structures 200 become the semiconductor fins 101 a, 101 b, 101 c and 101 d.

At Step S12 in FIG. 1 and as shown in FIG. 2A, ion implantation processes are performed to form doped regions in surfaces of the semiconductor fins so as to adjust or set threshold voltage values of the uLVT p-type FinFET, the SVT p-type FinFET, the SVT n-type FinFET or/and the uLVT n-type FinFET to be formed. In some embodiments, the ion implantation processes include a first implantation process and a second implantation process. The first implantation process is performed to form a doped region 103 c in a surface of the semiconductor fin 101 c, and a second implantation process is performed so as to form a doped region 103 b in a surface of the semiconductor fin 101 b. In some embodiments, the doped region 103 c is doped with n-type dopants, such as phosphorus or arsenic, and the doped region 103 b is doped with p-type dopants, such as boron or BF₂ ⁺.

In other words, the threshold voltage value of the SVT n-type FinFET to be formed in the region R3 is adjusted by performing the first implantation process first, and the threshold voltage value of the SVT p-type FinFET to be formed in the region R2 is also adjusted by performing the second implantation process first. The threshold voltage values of the uLVT p-type FinFET, the SVT p-type FinFET, the SVT n-type FinFET and the uLVT n-type FinFET may be further adjusted by the follow-up processes.

At Step S14 in FIG. 1 and as shown in FIG. 2B, gate stacks 104 a, 104 b, 104 c and 104 d are formed across the semiconductor fins 101 a, 101 b, 101 c and 101 d respectively. In one embodiment, an extending direction X of the gate stacks 104 a, 104 b, 104 c and 104 d is, for example, perpendicular to an extension direction Y of the semiconductor fins 101 a, 101 b, 101 c and 101 d, so as to cover middle portions of the semiconductor fins 101 a, 101 b, 101 c and 101 d. In some embodiments, the gate stack 104 a includes a gate dielectric layer 102 a and a gate electrode 108 a. Similarly, the gate stack 104 b includes a gate dielectric layer 102 b and a gate electrode 108 b, the gate stack 104 c includes a gate dielectric layer 102 c and a gate electrode 108 c, and the gate stack 104 d includes a gate dielectric layer 102 d and a gate electrode 108 d. In alternative embodiments, the gate stacks 104 a, 104 b, 104 c and 104 d further include spacers 112 a, 112 b, 112 c, and 112 d respectively.

In alternative embodiments, the gate stack 104 a, 104 b, 104 c or 104 d may further include interfacial layers (ILs) on the semiconductor fin 101 a, 101 b, 101 c or 101 d. In other words, the gate dielectric layer 102 a, 102 b, 102 c or 102 d is formed between the IL and the gate electrode 108 a, 108 b, 108 c or 108 d respectively. In some embodiments, the IL includes a dielectric material, such as silicon oxide or silicon oxynitride. The IL is formed by performing a thermal oxidation process, a chemical vapor deposition (CVD) process, or an atomic layer deposition (ALD) process. It should be noted that the detail described below with respect to the elements of the gate stacks 104 a may also apply to the elements of the gate stacks 104 b, 104 c and 104 d, and thus the description of the elements in the gate stacks 104 b, 104 c and 104 d are omitted.

The gate dielectric layer 102 a is formed to cover portions of the semiconductor fins 101 a. In some embodiments, the gate dielectric layer 102 a includes silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric materials, or a combination thereof. The high-k dielectric materials are generally dielectric materials with a dielectric constant higher than 4. The high-k dielectric materials include metal oxide. In some embodiments, examples of the metal oxide used as the high-k dielectric materials include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a combination thereof. The gate dielectric layer 102 a is formed by performing a thermal oxidation process, a CVD process, an ALD process, or a combination thereof.

The gate electrode 108 a is formed on the gate dielectric layer 102 a. In some embodiment, the gate electrode 108 a serves as dummy gate electrode, and the gate electrode 108 a is made of polysilicon. A metal gate (also referred to as “replacement gates”) may replace the dummy gate electrode in subsequent steps. The replacing step will be discussed in greater detail in subsequent paragraphs.

Lightly doped source and drain (LDD) regions (not shown) are formed in the semiconductor fins 101 a, 101 b, 101 c and 101 d. The LDD regions are formed by performing an ion implantation process, for example. In some embodiments, the semiconductor fins 101 a and 101 b in the region R1 and region R2 are doped with p-type dopants, and the semiconductor fins 101 c and 101 d in the region R3 and region R4 are doped with n-type dopants.

As shown in FIG. 2B, the spacers 112 a are formed over sidewalls of the gate electrode 108 a. The spacers 112 a are formed of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, SiCN, fluoride-doped silicate glass (FSG), low-k dielectric materials (such as or SiCON), or a combination thereof. It should be noted that the low-k dielectric materials are generally dielectric materials having a dielectric constant lower than 3.9. The spacers 112 a may have a multi-layer structure including one or more liner layers. The liner layer includes a dielectric material such as silicon oxide, silicon nitride, and/or other suitable materials. The formation of the spacers 112 a can be achieved by depositing a suitable dielectric material and anisotropically etching off the dielectric material.

As shown in FIG. 2B, recesses 128 a, 128 b, 128 c and 128 d are formed within the semiconductor fin 101 a, 101 b, 101 c and 101 d beside the gate stacks 104 a, 104 b, 104 c and 104 d by removing a portion of the semiconductor fins 101 a, 101 b, 101 c and 101 d at locations intended for source and drain regions. In some embodiments, the formation of the recesses 128 a, 128 b, 128 c and 128 d includes performing a first etching process and a second etching process. Here, the first etching process refers to a trench etching process such as an anisotropic etching process, and the second etching process refers to a lateral etching process such as an isotropic etching process.

At Step S16 in FIG. 1 and as shown in FIG. 2B, strain layers 130 a and 130 b are formed in recesses 128 a and 128 b of the semiconductor fin 101 a and 101 b in the region R1 and the region R2 respectively. The strain layers 130 a and 130 b are formed at sides of the gate stacks 104 a and 104 b respectively. Lattice constants of the strain layers 130 a and 130 b are different from a lattice constant of the substrate 100, and portions of the semiconductor fins 101 a and 101 b covered by the gate stacks 104 a and 104 b are strained or stressed to enhance carrier mobility and performance of the FinFETs. In one embodiment, the strain layers 130 a and 130 b, such as SiGe, are utilized for electron mobility enhancement of the uLVT p-type FinFET and the SVT p-type FinFET to be formed in the region R1 and the region R2 respectively.

In addition, strain layers 130 c and 130 d are formed in the semiconductor fins 101 c and 101 d in the region R3 and the region R4. Lattice constants of the strain layers 130 c and 130 d are different from the lattice constant of the substrate 100, and portions of the semiconductor fins 101 c and 101 d covered by the gate stack 104 c and 104 d are strained or stressed to enhance the carrier mobility and performance of the FinFETs. In one embodiment, the strain layers 130 b such as SiC or SiP, are utilized for electron mobility enhancement of the SVT n-type FinFET and the uLVT n-type FinFET to be formed in the region R3 and the region R4 respectively.

In some embodiments, the strain layers 130 a, 130 b, 130 c and 130 d are foamed through epitaxial growth. In some embodiments, the epitaxial growth technology includes performing a low pressure CVD (LPCVD) process, an atomic layer CVD (ALCVD) process, an ultrahigh vacuum CVD (UHVCVD) process, a reduced pressure CVD (RPCVD) process, a molecular beam epitaxy (MBE) process, a metalorganic vapor phase epitaxy (MOVPE) process or a combination thereof. Alternatively, the epitaxial growth technology utilizes a cyclic deposition-etch (CDE) epitaxy process or a selective epitaxial growth (SEG) process to form the strained material of high crystal quality. In some embodiments, a material of the strain layers 130 a and 130 b includes a p-type dopant (such as boron or BF₂ ⁺) doped therein formed through selective epitaxial growth by performing in-situ doping, and a material of the strain layers 130 c and 130 d includes an n-type dopant (such as phosphorus or arsenic) doped therein formed through selective epitaxial growth by performing in-situ doping.

At Step S18 in FIG. 1 and as shown in FIG. 2C, an etch stop layer 114 is formed over the substrate 100. In some embodiments, the etch stop layer 114 may be referred to as a contact etch stop layer (CESL). The etch stop layer 114 includes silicon nitride, carbon-doped silicon nitride, or a combination thereof. In some embodiments, the etch stop layer 114 is deposited by performing a CVD process, a high density plasma (HDP) CVD process, a sub-atmospheric CVD (SACVD) process, a molecular layer deposition (MLD) process, or other suitable processes. In some embodiments, before the etch stop layer 114 is formed, a buffer layer (not shown) may be formed over the substrate 100. In an embodiment, the buffer layer is an oxide such as silicon oxide. However, other compositions may be possible. In some embodiments, the buffer layer is deposited by performing a CVD process, a HDPCVD process, a SACVD process, an MLD process, or other suitable processes.

At Step S20 in FIG. 1 and as shown in FIG. 2C, a dielectric layer 116 is formed over the etch stop layer 114. In some embodiments, the dielectric layer 116 may be referred to as an interlayer dielectric layer (ILD). The dielectric layer 116 includes silicon oxide, silicon nitride, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), spin-on glass (SOG), fluorinated silica glass (FSG), carbon doped silicon oxide (e.g., SiCOH), polyimide, and/or a combination thereof. In some other embodiments, the dielectric layer 116 includes low-k dielectric materials. It should be noted that the low-k dielectric materials are generally dielectric materials having a dielectric constant lower than 3.9. Examples of low-k dielectric materials include BLACK DIAMOND® (Applied Materials of Santa Clara, Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), Flare, SILK® (Dow Chemical, Midland, Mich.), hydrogen silsesquioxane (HSQ) or fluorinated silicon oxide (SiOF), and/or a combination thereof. It is understood that the dielectric layer 116 may include one or more dielectric materials and/or one or more dielectric layers. In some embodiments, the dielectric layer 116 is formed to have a suitable thickness by performing a flowable CVD (FCVD) process, a CVD process, a HDPCVD process, a SACVD process, a spin-on process, a sputtering process, or other suitable processes.

At Step S22 in FIG. 1 and as shown in FIG. 2D, the dielectric layer 116 and the etch stop layer 114 are partially removed such that top surfaces of the gate stacks 104 a, 104 b, 104 c and 104 d are exposed, and a dielectric layer 116 a and an etch stop layer 114 a are formed. The process of removing a portion of the dielectric layer 116 and a portion of the etch stop layer 114 is achieved by a chemical mechanical polishing (CMP) process, an etching process, or other suitable processes.

At Step S24 in FIG. 1 and as shown in FIGS. 2D and 2E, a metal replacement process is performed. In some embodiments, the gate electrodes 108 a, 108 b, 108 c and 108 d are dummy gate electrodes, and are replaced respectively by gate electrodes 120 a, 120 b, 120 c and 120 d. Specifically, materials of the gate electrodes 108 a, 108 b, 108 c and 108 d are polysilicon and the materials of the gate electrodes 120 a, 120 b, 120 c and 120 d include metal-containing conductive layers. At least one of the metal-containing conductive layers includes a barrier, a work function layer, a seed layer, an adhesion layer, a barrier layer, a filter layer, a metal filling layer or a combination thereof. The metal-containing conductive layers include Al, Cu, W, Ti, Ta, Ag, Ru, Mn, Zr, TiAl, TiN, TaN, WN, TiAlN, TaN, TaC, TaCN, TaSiN, NiSi, CoSi, or a combination thereof, for example. The metal-containing conductive layers are formed by forming metal-containing conductive material layers, and a chemical mechanical polishing (CMP) process, an etching process, or other suitable processes.

In some embodiments, the gate electrode 120 a includes a work function layer 122 a, a filter layer 124 a and a metal filling layer 126 a for the uLVT p-type FinFET, and the gate electrode 120 b includes a work function layer 122 b, a filter layer 124 b and a metal filling layer 126 b for the SVT p-type FinFET. Similarly, the gate electrode 120 c includes a work function layer 122 c, a filter layer 124 c and a metal filling layer 126 c for the SVT n-type FinFET, and the gate electrode 120 d includes a work function layer 122 d, a filter layer 124 d and a metal filling layer 126 d for the uLVT n-type FinFET.

In some embodiments, materials of the work function layers 122 a and 122 b are the same, and include TiN, WN, TaN, Ru, or a combination thereof. Materials of the work function layers 122 c and 122 d are the same, and include Ti, Ag, Al, TiAl, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, or a combination thereof. The work function layers 122 a, 122 b, 122 c and 122 d may be formed by performing a suitable process such as an ALD process, a CVD process, a PVD process, a plating process, or a combination thereof. Thicknesses of the work function layer 122 a, 122 b, 122 c, and 122 d are in a range from 30 angstroms to 50 angstroms. Materials of the metal filling layers 126 a, 126 b, 126 c and 126 d include tungsten (W). The metal filling layers 126 a, 126 b, 126 c and 126 d may be formed by performing a suitable process such as an ALD process, a CVD process, a PVD process, a plating process, or a combination thereof.

The filter layer 124 a is formed between the metal filling layer 126 a and the work function layer 122 a. In some embodiments, the filter layer 124 a is formed to avoid or decrease penetration of diffusion atoms (such as W, F or O) from the work function layer 122 to the metal filling layer 126 a, or from the metal filling layer 126 a to the work function layer 122 a. The diffusion atoms include metal atoms (such as W) derived from the metal filling layer 126 a and diffusing into the work function layer 122 a, or residues (such as F or O) derived from a precursor of the metal filling layer 126 a or the work function layer 122 a (be oxidized). As a result, the issue of threshold voltage shift may be prevented or decreased. Similarly, the filter layer 124 b is disposed between the metal filling layer 126 b and the work function layer 122 b, the filter layer 124 c is disposed between the metal filling layer 126 c and the work function layer 122 c, and the filter layer 124 d is disposed between the metal filling layer 126 d and the work function layer 122 d. The filter layers 124 b, 124 c and 124 d are also formed to prevent or decrease the diffusion of the diffusion atoms.

In some embodiments, a material of the filter layer 124 a is the same as a material of the filter layer 124 b, and a material of the filter layer 124 c is the same as a material of the filter layer 124 d. Furthermore, in alternative embodiments, the materials of the filter layers 124 a, 124 b, 124 c and 124 d are the same. In alternative embodiments, the materials of the filter layers 124 a, 124 b, 124 c and 124 d are the same, and the materials of the work function layers 122 a and 122 b are the same as the materials of the filter layers 124 a, 124 b, 124 c and 124 d, whereas the materials of the work function layers 122 c and 122 d are different from the materials of the filter layers 124 a, 124 b, 124 c and 124 d.

In some embodiments, the materials of the filter layers 124 a, 124 b, 124 c and 124 d are the same, and the materials of the work function layer 122 a and 122 b are the same as the materials of the filter layers 124 a, 124 b, 124 c and 124 d, whereas the materials of the work function layers 122 c and 122 d are different from the materials of the filter layers 124 a, 124 b, 124 c and 124 d. Furthermore, the materials of the filter layers 124 a, 124 b, 124 c and 124 d are selected from a material that results in little or no variation of threshold voltages of the uLVT p-type FinFET and the SVT p-type FinFET, but results in decrease/increase of threshold voltages of the SVT n-type FinFET and the uLVT n-type FinFET when thicknesses of the filter layers 124 a, 124 b, 124 c and 124 d are increased/decreased. In other words, the materials of the filter layers 124 a, 124 b, 124 c and 124 d are selected from a material such that the extent of decreases in threshold voltages of the SVT n-type FinFET and the uLVT n-type FinFET are more than the extent of decreases/increases in the threshold voltage values of the uLVT p-type FinFET and the SVT p-type FinFET when the thicknesses of the filter layer 124 a, 124 b, 124 c and 124 d are increased/decreased.

In alternative embodiments, the materials of the filter layers 124 a, 124 b, 124 c and 124 d are the same, and the materials of the work function layers 122 a and 122 b are the same as the materials of the filter layers 124 a, 124 b, 124 c and 124 d, whereas the materials of the work function layers 122 c and 122 d are different from the materials of the filter layers 124 a, 124 b, 124 c and 124 d. The materials of the filter layers 124 a, 124 b, 124 c and 124 d are selected from a material such that the threshold voltage values of the SVT n-type FinFET and the uLVT n-type FinFET are decreased/increased and the threshold voltage values of the uLVT p-type FinFET and the SVT p-type FinFET are increased/decreased when a temperature of a thermal process performed after the formation of the filter layers 124 a, 124 b, 124 c and 124 d are increased/decreased. The temperature of the thermal process is in a range from 600° C. to 650° C., for example. The thermal process may be any thermal process performed after the formation of the filter layers 124 a, 124 b, 124 c and 124 d. In some embodiments, the thermal process may be a step of a self-aligned silicide process or a step of a self-aligned germanide process. Alternatively, the thermal process is performed after a self-aligned silicide process or a self-aligned germanide process.

In some embodiments, the materials of the filter layers 124 a, 124 b, 124 c and 124 d include a metal nitride (such as TiN), or a composite containing metal nitride (such as TiN-Si₃N₄ composite, TSN). The filter layers 124 a, 124 b, 124 c and 124 d may be formed by performing a suitable process such as an ALD process, a CVD process, a PVD process, a plating process, or a combination thereof. The thicknesses of the filter layers 124 a, 124 b, 124 c and 124 d are in a range form 10 angstroms to 30 angstroms.

At Step S26 in FIG. 1 and as shown in and FIG. 2F, the gate electrodes 120 a, 120 b, 120 c and 120 d are partially removed by performing an etching process so as to form recesses (not shown). Thereafter, the caps 132 a, 132 b, 132 c and 132 d are filled in the recesses. In some embodiments, the caps 132 a, 132 b, 132 c and 132 d include silicon nitride, carbon-doped silicon nitride, or a combination thereof. In some embodiments, the caps 132 a, 132 b, 132 c and 132 d are formed by performing a deposition process using CVD, high density plasma (HDP) CVD, sub-atmospheric CVD (SACVD), molecular layer deposition (MLD), or other suitable methods, and performing a CMP process.

As shown in and FIG. 2F, as a result, the gate stacks 140 a, 140 b, 140 c and 140 d are farmed across the semiconductor fins 101 a, 101 b, 101 c and 101 d respectively. The gate stack 140 a includes the gate dielectric layer 102 a, the gate electrode 120 a, the cap 132 a and the spacer 112 a. The gate electrode 120 a includes the work function layer 122 a, the filter layer 124 a and the metal filling layer 126 a. It should be noted that the details described below with respect to the elements of the gate stack 140 a may also apply to the elements of the gate stacks 140 b, 140 c and 140 d, and thus the description of the elements in the gate stacks 140 b, 140 c and 140 d are omitted.

At Steps S28 and S30 in FIG. 1 and as shown in and FIG. 2F, another dielectric layer 134 is formed over the substrate 100. A contact hole 135 is framed in the dielectric layer 134, the dielectric layer 116 a and the etch stop layer 114 a. In some embodiments, the contact hole 135 is formed by performing a photolithography process and an etching process. In some embodiments, the dielectric layer 134, 116 a may include the same material and be formed by the same formation process, but the present disclosure is not limited thereto. The material and the formation process have been described in the foregoing paragraphs, and the details are not iterated herein.

At Step S32 in FIG. 1 and as shown in and FIG. 2G, silicide region 136 may be optionally formed on the strain layer 130 c exposed by the contact hole 135 through a self-aligned silicide (salicide) process. The silicide region 136 includes titanium silicide, cobalt silicide, nickel silicide, platinum silicide, erbium silicide, or palladium silicide. In some embodiments, germanide regions may be optionally formed on the strain layer 130 c by a self-aligned germanide process if the substrate 100 includes Ge. In some embodiments, the germanide regions include NiGe, PtGe, TiGe₂, CoGe₂, or PdGe. In some embodiments, the self-aligned silicide (salicide) process and the self-aligned germanide process include forming a metal layer, performing a first thermal process and removing a remained metal layer. In alternative embodiments, the self-aligned silicide (salicide) process and the self-aligned germanide process further include performing a second thermal process after the step of removing the remained metal layer. In some embodiments, the temperature of the first thermal process or/and the second thermal process may be selected or controlled to adjust the threshold voltage values of the uLVT p-type FinFET in the region R1, the SVT p-type FinFET in the region R2, the SVT n-type FinFET in the region R3 and the uLVT n-type FinFET in the region R4.

At Step S34 in FIG. 1 and as shown in and FIG. 2G, a conductive material (not shown) may be formed to fill in the contact hole 135, so as to form a contact 138. The conductive material may include a metal material or alloy, for example. In some embodiments, the metal material includes copper, copper alloys, aluminum, aluminum alloys, tungsten, or a combination thereof. In other embodiments, the contact 138 may include a liner layer, a seed layer, an adhesion layer, a barrier layer, etc. Then, a portion of the conductive material is removed by performing a CMP process to expose a top surface of the dielectric layer 134. In some embodiments, a top surface of the contact 138 is coplanar with the top surface of the dielectric layer 134.

In the above embodiment, the threshold voltage value of the uLVT p-type FinFET formed in the region R1 and the threshold voltage value of the uLVT n-type FinFET formed in the region R4 may be set by controlling or adjusting the thicknesses of the filter layers 124 a and 124 d or/and the temperature of the thermal process performed after the formation of the filter layers 124 a and 124 d. The threshold voltage value of the SVT p-type FinFET framed in the region R2 is first adjusted by the second implantation process, and further adjusted by controlling the thickness of the filter layer 124 b or/and the temperature of the thermal process performed after the formation of the filter layer 124 b. The threshold voltage value of the SVT n-type FinFET formed in the region R3 is first adjusted by the first implantation process, and further adjusted by controlling the thickness of the filter layer 124 c or/and the temperature of the thermal process performed after the formation of filter layer 124 c.

FIG. 3A to 3B are cross-sectional views of a method for fabricating a semiconductor device in accordance with alternative embodiments.

At Step S12 in FIG. 1 and as shown in FIG. 2A, in the above embodiment, the ion implantation processes for the threshold voltage values adjustment include the first implantation process and the second implantation process. However, as shown in FIG. 3A, in alternative embodiments, the ion implantation processes include the first implantation process, the second implantation process and a third implantation process. The third implantation process is performed so as to form a doped region 103 a in the surface of the semiconductor fin 101 a. In some embodiments, the doped region 103 a is doped with p-type dopants, such as boron or BF₂ ⁺. In other words, the threshold voltage value of the uLVT p-type FinFET to be formed in the region R1 is adjusted by the third implantation process first, the threshold voltage value of the SVT p-type FinFET to be formed in the region R2 is adjusted by the second implantation process first, and the threshold voltage value of the SVT n-type FinFET to be formed in the region R3 is also adjusted by the first implantation process first.

As shown in FIG. 3B, similarly, the threshold voltage values of the uLVT p-type FinFET, the SVT p-type FinFET, the SVT n-type FinFET, and the uLVT n-type FinFET may be adjusted by controlling the thicknesses of the filter layers 124 a, 124 b, 124 c and 124 d or/and the temperature of the thermal process performed after the formation of the filters 124 b 124 a, 124 b, 124 c and 124 d.

In other words, in the embodiments, the threshold voltage value of the uLVT p-type FinFET in the region R1 is first adjusted by the third implantation process, and then adjusted by controlling or adjusting the thickness of the filter layer 124 a or/and the temperature of the thermal process performed after the formation of the filter layer 124 a. The threshold voltage value of the SVT p-type FinFET in the region R2 is first adjusted by the second implantation process, and then adjusted by controlling the thickness of the filter layer 124 b or/and the temperature of the thermal process performed after the formation of the filter layer 124 b. The threshold voltage value of the SVT n-type FinFET in the region R3 is first adjusted by the first implantation process, and then adjusted by controlling the thickness of the filter layer 124 c or/and the temperature of the thermal process performed after the formation of filter layer 124 c. The threshold voltage value of the uLVT n-type FinFET formed in the region R4 is set by controlling or adjusting the thickness of the filter layer 124 d or/and the temperature of the thermal process performed after the formation of the filter layer 124 d.

In the embodiments of the disclosure, the filter layer is formed between the work function layer and the metal filling layer, and is used to avoid or decrease penetration of diffusion atoms (such as W, F or O) from the work function layer to the metal filling layer, or from the metal filling layer to the work function layer. As a result, the issue of threshold voltage shift may be prevented or decreased. Furthermore, in some embodiments, the threshold voltage value of the FinFET is adjusted by performing an ion implantation process and controlling the thickness of the filter layer or/and the temperature of the thermal process performed after the formation of the filter layer. In alternative embodiments, the threshold voltage value of a FinFET is adjusted by controlling the thickness of the filter layer or/and the temperature of the thermal process performed after the formation of the filter layer. In other words, the threshold voltage value of a FinFET can be adjusted by the described method without applying a conventional ion implantation process.

In accordance with some embodiments of the present disclosure, a fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack and a strain layer. The substrate has a semiconductor fin. The gate stack is disposed across the semiconductor fin. The gate stack includes a gate dielectric layer, a work function layer and a metal filling layer. The gate dielectric layer is disposed on the semiconductor fin. The work function layer is disposed on the gate dielectric layer. The metal filling layer is over the work function layer. The filter layer is disposed between the work function layer and the metal filling layer to prevent or decrease penetration of diffusion atoms. The strain layer is beside the gate stack. A material of the filter layer is different from a material of the work function layer and a material of the metal filling layer.

In accordance with alternative embodiments of the present disclosure, a fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a p-type FinFET, and an n-type FinFET. The substrate has a first semiconductor fin in a first region of the substrate and a second semiconductor fin in a second region of the substrate. The p-type FinFET is in the first region and includes a first gate stack and a first strain layer. The first gate stack is across the first semiconductor fin and includes a first filter layer between a first work function layer and a first metal filling layer to prevent or decrease penetration of diffusion atoms in the p-type FinFET. The first strain layer is beside the first gate stack. The n-type FinFET is in the second region and includes a second gate stack and a second strain layer. The second gate stack is across the second semiconductor fin and includes a second filter layer between a second work function layer and a second metal filling layer to prevent or decrease penetration of diffusion atoms in the n-type FinFET. The second strain layer is beside the second gate stack.

In accordance with yet alternative embodiments of the present disclosure, a method for fabricating a fin field effect transistor (FinFET) is provided. The method includes steps as follows. A substrate having a semiconductor fin is provided. A gate stack is formed across the semiconductor fin. A strain layer is formed beside the gate stack. Formation of the gate stack includes steps as follows. A gate dielectric layer is formed on the semiconductor fin. A work function layer is formed on the gate dielectric layer. A filter layer is formed on the work function layer to prevent or decrease penetration of diffusion atoms. A metal filling layer is formed on the filter layer. In addition, a material of the filter layer is different from a material of the metal filling layer.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. An n-type FinFET, comprising: a substrate having a semiconductor fin; a gate stack across the semiconductor fin, the gate stack comprising: a gate dielectric layer on the semiconductor fin; a work function layer on the gate dielectric layer; a metal filling layer over the work function layer; and a filter layer between the work function layer and the metal filling layer to prevent or decrease penetration of diffusion atoms, wherein a material of the filter layer is different from a material of the work function layer and a material of the metal filling layer; and strain layers beside the gate stack.
 2. The n-type FinFET of claim 1, wherein the material of the filter layer comprises a metal nitride or a composite containing metal nitride.
 3. The n-type FinFET of claim 2, wherein the metal nitride comprises TiN, and the composite containing metal nitride comprises TiN-Si₃N₄ composite (TSN).
 4. The n-type FinFET of claim 1, wherein the material of the filter layer is selected from a material such that a threshold voltage value of the n-type FinFET is decreased when a thickness of the filter layer is increased.
 5. The n-type FinFET of claim 1, wherein the material of the filter layer is selected from a material such that a threshold voltage value of the n-type FinFET is decreased when a temperature of a thermal process performed to the filter layer is increased.
 6. A semiconductor device, comprising: a substrate having a first semiconductor fin in a first region of the substrate and a second semiconductor fin in a second region of the substrate; a p-type FinFET in the first region, comprising: a first gate stack across the first semiconductor fin, comprising a first filter layer between a first work function layer and a first metal filling layer to prevent or decrease penetration of diffusion atoms in the p-type FinFET; and first strain layers beside the first gate stack; and an n-type FinFET in the second region, comprising: a second gate stack across the second semiconductor fin, comprising a second filter layer between a second work function layer and a second metal filling layer to prevent or decrease penetration of diffusion atoms in the n-type FinFET; and second strain layers beside the second gate stack.
 7. The semiconductor device of claim 6, wherein a material of the first filter layer is the same as a material of the second filter layer.
 8. The semiconductor device of claim 7, wherein the material of the first filter layer and the material of the second filter layer are the same as a material of the first work function layer but different from a material of the second work function layer.
 9. The semiconductor device of claim 8, wherein the material of the first filter layer and the material of the second filter layer are selected form a material such that an extent of decrease in a threshold voltage value of the n-type FinFET is more than an extent of decrease in a threshold voltage value of the p-type FinFET when a thickness of the first filter layer and a thickness of the second filter layer are increased.
 10. The semiconductor device of claim 8, wherein the material of the first filter layer and the material of the second filter layer are selected form a material such that an extent of increase in a threshold voltage value of the n-type FinFET is more than an extent of increase in a threshold voltage value of the p-type FinFET when a thickness of the first filter layer and a thickness of the second filter layer are decreased.
 11. The semiconductor device of claim 8, wherein the material of the first filter layer and the material of the second filter layer are selected form a material such that a threshold voltage value of the n-type FinFET is decreased and a threshold voltage value of the p-type FinFET is increased when a temperature of a thermal process performed to the first filter layer and the second filter layer is increased.
 12. The semiconductor device of claim 6, wherein the material of the first filter layer and the material of the second filter layer comprise a metal nitride or a composite containing metal nitride.
 13. The semiconductor device of claim 12, wherein the metal nitride comprises TiN, and the composite containing metal nitride comprises TiN-Si₃N₄ composite (TSN).
 14. A method of fabricating a FinFET, comprising: providing a substrate having a semiconductor fin; forming a gate stack across the semiconductor fin, comprising: forming a gate dielectric layer on the semiconductor fin; forming a work function layer on the gate dielectric layer; forming a filter layer on the work function layer to prevent or decrease penetration of diffusion atoms; forming a metal filling layer on the filter layer, wherein a material of the filter layer is different from a material of the metal filling layer; and forming strain layers beside the gate stack.
 15. The method of claim 14, further comprising adjusting a thickness of the filter layer to control a threshold voltage value of the FinFET.
 16. The method of claim 15, further comprising decreasing the thickness of the filter layer to increase the threshold voltage value of the FinFET when the FinFET is an n-type FinFET.
 17. The method of claim 15, further comprising increasing the thickness of the filter layer to decrease the threshold voltage value of the FinFET when the FinFET is an n-type FinFET.
 18. The method of claim 14, further comprising performing a thermal process after forming the filter layer and adjusting a temperature of the thermal process to vary a threshold voltage value of the FinFET.
 19. The method of claim 18, further comprising increasing the temperature of the thermal process to decrease the threshold voltage value of the FinFET when the FinFET is an n-type FinFET, or to increase the threshold voltage value of the FinFET when the FinFET is a p-type FinFET.
 20. The method of claim 18, further comprising decreasing the temperature of the thermal process to increase the threshold voltage value of the FinFET when the FinFET is an n-type FinFET, or to decrease the threshold voltage value of the FinFET when the FinFET is a p-type FinFET. 